With the increasingly mature and large-scale Very Large Scale Integration manufacturing technology, new thin-film transistor display technology and large area OLED display technology, laser annealing technology has gradually replaced the traditional furnace tube annealing, rapid thermal annealing, peak annealing, flash annealing, and become a new generation of mainstream annealing technology.

Since former Soviet scientist Gerasi menko began studying laser annealing in 1975, researchers have developed and maintained a strong interest in the study of laser annealing mechanisms in the following years. A significant feature of laser annealing is that high-energy density laser irradiation (several J/cm2) is projected onto a small area of the annealed sample in an ultra short time (ranging from tens to hundreds of nanoseconds), causing the material on the sample surface to melt and naturally growing crystal thin films in the liquid phase epitaxy of the molten layer during the subsequent cooling process, reconstructing the crystal structure of the molten layer.

In the process of reconstructing crystals, lattice damage caused by ion implantation is eliminated, doped impurities diffuse and redistribute at high temperatures, impurity atoms dissolve in the crystal, and are activated to release holes or electrons.

Laser annealing technology has been mainly used to repair semiconductor materials damaged by ion implantation, especially silicon. Traditional heating annealing technology involves placing the entire workpiece in a vacuum furnace and annealing it at a certain temperature (300° -1200 ℃) for 10 to 60 minutes.

The application of laser annealing technology in integrated circuits mainly involves the following three aspects: (1) annealing the electrodes (source, drain, and gate) of semiconductor devices to form ohmic contacts through metallization; (2) Annealing the internal connections of integrated circuits; (3) Perform annealing on 3D structures, such as memory, NEMS, etc.

Power devices such as MOSFETs, IGBTs, etc. have vertical structures that generate vertical currents during operation. The back electrode is used as an ohmic contact or emitter. This back electrode can be easily obtained using laser annealing technology. The IGBT collector structure includes two doping regions: a P-type surface collector and a buried N-type field cutoff layer,

The reasonable selection of Ti metal layer thickness can make it a layer of anti reflection film and thermal absorption layer, thereby improving the efficiency of laser annealing, activating more impurities, and obtaining higher doping concentration. Therefore, Ti is commonly used as the base layer during processing.

About HGTECH

HGTECH is the pioneer and leader of laser industrial application in China, and the authoritative provider of global laser processing solutions. We comprehensively layout the construction of laser intelligent equipment, measurement and automation production lines, and smart factories to provide an overall solution for intelligent manufacturing.

We deeply grasp the development trend of manufacturing industry, constantly enrich products and solutions, adhere to exploring the integration of automation, informatization, intelligence and manufacturing industry, and provide various industries with laser cutting systems, laser welding systems, laser marking series, laser texturing complete equipment, laser heat treatment systems, laser drilling machines, lasers and various supporting devices The overall plan for the construction of special laser processing equipment and plasma cutting equipment, as well as automatic production lines and smart factories.